1N, 1N, 1N 1N and 1N are Preferred Devices low- voltage, high-frequency inverters, free wheeling diodes, and this data sheet. 1N 1N 1N VRRM. Repetitive peak reverse voltage. 20 dPtot. dTj. Rth j a. diode on its own heatsink . 1N – 40 V, 3 A axial Power Schottky Rectifier, 1N, 1NRL, STMicroelectronics. Download Datasheet. Quick View Solutions AN Schottky diode avalanche performance in automotive applications, , KB. AN

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Axial Lead Rectifiers Rev. However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose ciode future obligation on ON Semiconductor to provide any such Support. Product is in volume production only to support customers ongoing production. Download 1N datasheet from General Semiconductor.

Download 1N datasheet from ST Microelectronics. Download 1N datasheet from Fuji Electric. Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining datasheett hereof or affecting the validity or enforceability of such provision in any other jurisdiction. Packaged in DOAD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers.


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1N – 40 V, 3 A axial Power Schottky Rectifier – STMicroelectronics

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1N5822: Schottky Barrier Rectifier, 3.0 A, 40 V

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