IRF9Z24N. Overview. Buy online. Data Sheet – IRF9Z24NEN. | pdf | KB. V Single P-Channel HEXFET Power MOSFET in a TOAB. IRF9Z24N V Single P-channel HexFET Power MOSFET in a TOAB Package. Advanced Process Technology Dynamic dv/dt Rating l °C Operating. IRF9Z24N. HEXFET® Power MOSFET. PD B. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve.
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Sign in to check out Check out as guest. Please note the delivery estimate is greater than 9 business days. V VCEO min. No additional import charges at delivery! High breakdown voltage, up to 70V. Pin Out hFE Ic min.
When a datasheet specifies output current is it per pin or aggregated for all pins? Post as a guest Name. On devices above 2. Subject to credit daatasheet.
The varying switching ratio nominal 1 second time base irf92z4n, is proportional to signal input, as is indicated by a flashing LED. Pulsed V A 2.
IT rms A 0. Back to home page Return to top. Skip to main content.
Screw terminals are M5. MHz — — — — F max. Namely, the datasheet says with a HIGH output then it appears to allude to sinking 15mA indicated by the negative sign.
PDF F9Z24N Datasheet ( Hoja de datos )
Unidirec- Bidirectional tional a. Clearly one of these refers to the capacity of the device to source and sink current, but the relationship between current sign and output voltage appears backwards to me.
Report item – opens in a new window jrf9z24n tab. Applications include quartz lamp datsaheet conventional resistance heating. Learn More – opens in a new window or tab Any international shipping is paid in part to Pitney Bowes Inc. A 20 35 50 56 60 70 85 Ic max. SD Order Code Mftrs. V V mA Single Diode 75 1 75 1 85 1.